Resistance of through-thickness grain boundaries to cleavage cracking in silicon thin films
نویسندگان
چکیده
Through a set of microtensile experiments, it was discovered that the resistance of a free-standing polycrystalline silicon thin film to cleavage cracking is not a material constant. Rather, it is highly dependent on the film thickness. As the film thickness changes from 1 to 10 lm, the fracture resistance increases by 20–60%, which can be attributed to the nonuniform nature of the crack front advance across grain boundaries. 2008 Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
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